Neutral ion-implantation-induced selective quantum-dot intermixing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2150279
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1. Engineering quantum-dot lasers
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3. Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide
4. Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots
5. Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots
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5. Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing;Journal of Nanoscience and Nanotechnology;2011-10-01
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