Range distribution of implanted ions in SiO2, Si3N4, and Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654480
Reference10 articles.
1. RANGES OF Na, K, Kr, AND Xe IONS IN AMORPHOUS Al2O3 IN THE ENERGY REGION 40–1 000 KEV
2. Determination of Lattice Disorder Profiles in Crystals by Nuclear Backscattering
3. Microanalysis of Materials by Backscattering Spectrometry
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2. Sputtering yields, range and range straggling in Al following Kr+ ions bombardment in the energy range (20–160)keV;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-10
3. The derivation and moments solution of approximate transport equations for the implantation of ions into amorphous targets;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-06
4. Optical investigation of a very asymmetric double-barrier resonant-tunneling structure;Physical Review B;1992-03-15
5. Calculation of mean projected range and range straggling of heavy ions in polyatomic targets;Journal of Physics D: Applied Physics;1990-10-14
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