InAlGaAs impact ionization rates in bulk, superlattice, and sawtooth band structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112427
Reference15 articles.
1. Impact ionisation in multilayered heterojunction structures
2. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
3. A new method to control impact ionization rate ratio by spatial separation of avalanching carriers in multilayered heterostructures
4. The graded bandgap multilayer avalanche photodiode: A new low-noise detector
5. InGaAsP/InAlAs superlattice avalanche photodiode
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1. Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate;Scientific Reports;2020-10-07
2. Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates;2020 Device Research Conference (DRC);2020-06
3. A New InP–InGaAs HBT With a Superlattice-Collector Structure;IEEE Electron Device Letters;2004-05
4. Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance;Superlattices and Microstructures;2000-08
5. Noise Analysis of InP/InGaAs Superlattice Avalanche Photodiode;IETE Journal of Research;2000-07
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