Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy

Published:1995-06-19 Issue:25 Volume:66 Page:3471-3473
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gao Wei,Berger Paul R.,Hunsperger Robert G.,Zydzik G.,Rhodes W. W.,O’Bryan H. M.,Sivco D.,Cho A. Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113767

Reference27 articles.

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode;Journal of Materials Science: Materials in Electronics;2021-03-26

4. Optimal Estimation of Schottky Diode Parameters Using Advanced Swarm Intelligence Algorithms;Semiconductors;2020-11

5. Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range;Journal of Materials Science: Materials in Electronics;2020-04-18

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