A quantum dot asymmetric self-gated nanowire FET for high sensitive detection-Reference-Cited by-同舟云学术

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A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

Published:2015-01 Issue:1 Volume:5 Page:017108
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Shi Zhangchun¹,Yang Xiaohong¹^ORCID,Nie Chenglei¹,Yin Weihong¹,Han Qin¹,Ni Haiqiao²,Niu Zhichuan²

Affiliation:

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People’s Republic of China

2. State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People’s Republic of China

Funder

National key Basic Research and Development Program of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/1/1.4905787.pdf?itemId=/content/aip/journal/adva/5/1/10.1063/1.4905787&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference28 articles.

1. Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

2. Spectral dependency of superconducting single photon detectors

3. Quantum computers

4. Fundamental Bound on the Reliability of Quantum Information Transmission

5. Experimental demonstration of an active phase randomization and monitor module for quantum key distribution

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