Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy

Published:2017-03-13 Issue:11 Volume:110 Page:112102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee In-Hwan¹,Polyakov A. Y.²,Yakimov E. B.²³^ORCID,Smirnov N. B.²,Shchemerov I. V.²,Tarelkin S. A.²⁴^ORCID,Didenko S. I.²,Tapero K. I.²⁵,Zinovyev R. A.²^ORCID,Pearton S. J.⁶^ORCID

Affiliation:

1. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, South Korea

2. National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049, Russia

3. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432, Russia

4. Technological Institute for Superhard and Novel Carbon Materials, 7 Centralnaya St., Troitsk, Moscow 142190 Russia

5. Research Institute of Scientific Instruments, Lytkarino, Industrial Zone “Turaevo” 8, Moscow Region 140080, Russia

6. University of Florida, Gainesville, Florida 32611, USA

Funder

Defense Threat Reduction Agency (DTRA)

National Research Foundation of Korea (NRF)

Ministry of Education and Science of the Russian Federation (Minobrnauka)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4978641

Reference25 articles.

1. Advances in AlGaN/GaN HEMT Surface Passivation

2. Advances in Diamond Integration for Thermal Management in GaN Power HEMTs

3. Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

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