Optical properties of AlxGa1−xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121322
Reference9 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry
4. Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
5. Polarized Reflectance Spectroscopy and Spectroscopic Ellipsometry Determination of the Optical Anisotropy of Gallium nitride on Sapphire
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