Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb∕GaSb quantum well interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1900286
Reference34 articles.
1. Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
2. GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range
3. Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers
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