Photoluminescence in strained InGaAs/GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338011
Reference21 articles.
1. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
2. Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices
3. Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief review
4. Hall‐effect measurements inp‐type InGaAs/GaAs strained‐layer superlattices
5. Optical studies of InxGa1−xAs‐GaAs strained multiquantum well structures
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3. The calculation and the photoluminescence characterization of energy levels in a strained GaAs/In0.2Ga0.8As/GaAs quantum well heterostructure for the application of light-emitting real-space transfer devices;Journal of Applied Physics;1997-05-15
4. Power Dependence of the Recombination Processes in the ln x Ga 1- x As/GaAs Single Quantum Well;Chinese Physics Letters;1991-08
5. Molecular beam epitaxial growth and properties of highly strained InxGa1−xAs/GaAs multiple quantum wells;Journal of Crystal Growth;1991-05
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