A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors
Author:
Affiliation:
1. Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, Arizona 85712, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4983761
Reference59 articles.
1. Recent advances in GaN transistors for future emerging applications
2. Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance
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