Identification of surface and volume hot-carrier thermalization mechanisms in ultrathin GaAs layers-Reference-Cited by-同舟云学术

Identification of surface and volume hot-carrier thermalization mechanisms in ultrathin GaAs layers

Published:2020-11-21 Issue:19 Volume:128 Page:193102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Giteau Maxime¹²^ORCID,de Moustier Edouard¹²,Suchet Daniel²³^ORCID,Esmaielpour Hamidreza²³^ORCID,Sodabanlu Hassanet¹²^ORCID,Watanabe Kentaroh¹²^ORCID,Collin Stéphane²⁴^ORCID,Guillemoles Jean-François²³^ORCID,Okada Yoshitaka¹²^ORCID

Affiliation:

1. Research Center for Advanced Science and Technology, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8904, Japan

2. NextPV, LIA RCAST-CNRS, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8904, Japan

3. CNRS, Ecole Polytechnique-IP Paris, Institut Photovoltaique d'Ile de France (IPVF), UMR 9006, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France

4. Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France

Funder

Japan Society for the Promotion of Science

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0027687

Reference39 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. Efficiency of hot‐carrier solar energy converters

3. Demonstration of a hot-carrier photovoltaic cell

4. Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature

5. Experimental demonstration of hot-carrier photo-current in an InGaAs quantum well solar cell

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