Mobility enhancement in electric double layer gated n-ZnO ultraviolet photodetector by synergy of gate and illumination: A photo Hall study-Reference-Cited by-同舟云学术

Mobility enhancement in electric double layer gated n-ZnO ultraviolet photodetector by synergy of gate and illumination: A photo Hall study

Published:2015-01-26 Issue:4 Volume:106 Page:041102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mondal Shahnewaz¹,Ghimire Rishi Ram¹,Raychaudhuri A. K.¹

Affiliation:

1. Department of Condensed Matter Physics and Materials Science, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 098, West Bengal, India

Funder

Department of Science and Technology, Ministry of Science and Technology (DST)

Council of Scientific and Industrial Research (CSIR)

Academy of Sciences for the Developing World (TWAS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906598

Reference17 articles.

1. Dominant Mobility Modulation by the Electric Field Effect at theLaAlO3/SrTiO3Interface

2. Single-gated mobility modulation transistor

3. Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

4. Observation of a large gate-controlled persistent photoconduction in single crystal ZnO at room temperature

5. Insulator-to-metal transition in ZnO by electric double layer gating

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