Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices-Reference-Cited by-同舟云学术

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Published:2015-12-07 Issue:21 Volume:118 Page:214501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dirkmann Sven¹,Ziegler Martin²,Hansen Mirko²,Kohlstedt Hermann²,Trieschmann Jan¹^ORCID,Mussenbrock Thomas¹

Affiliation:

1. Institute of Theoretical Electrical Engineering, Department of Electrical Engineering and Information Science, Ruhr University Bochum, D-44780 Bochum, Germany

2. Nanoelectronics Group, Institute of Electrical and Information Engineering, Christian Albrechts University Kiel, D-24143 Kiel, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936107

Reference31 articles.

1. Low‐Frequency Negative Resistance in Thin Anodic Oxide Films

2. Switching properties of thin Nio films

3. Electrical phenomena in amorphous oxide films

4. Conduction in thin dielectric films

5. The missing memristor found

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling defect-level switching for nonlinear and hysteretic electronic devices;Journal of Applied Physics;2024-06-10

2. Modeling and Simulation of Silver-Based Filamentary Memristive Devices;Springer Series on Bio- and Neurosystems;2023-09-20

3. Computational Study on Filament Growth Dynamics in Microstructure-Controlled Storage Media of Resistive Switching Memories;ACS Nano;2023-05-26

4. Spatiotemporal dynamics of voltage-induced resistance transition in the double-exchange model;Physical Review B;2022-12-28

5. Annealing induced cation diffusion in TaO_x-based memristor and its compatibility for back-end-of-line post-processing;Applied Physics Letters;2022-12-05