High‐resistivity regions inn‐type InGaAsP produced by ion bombardment at different temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357127
Reference13 articles.
1. The electrical characteristics of ion implanted compound semiconductors
2. Ion implantation in GaAs
3. Proton bombardment in InP
4. Damaged-induced isolation in n-type InP by light-ion implantation
5. Implant‐induced high‐resistivity regions in InP and InGaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-09
2. Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing;Journal of Physics D: Applied Physics;2013-04-03
3. Implant isolation in an indium phosphide optoelectronic device: A scanning spreading resistance microscopy study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
4. Electrical properties ofp‐type InGaAsP and InGaAs irradiated with He+and N+;Journal of Applied Physics;1995-06
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