Radiation damage of gallium arsenide induced by reactive ion etching-Reference-Cited by-同舟云学术

Radiation damage of gallium arsenide induced by reactive ion etching

Published:1987-11-15 Issue:10 Volume:62 Page:4109-4113
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hara Tohru,Suzuki Hidenori,Suga Akio,Terada Toshiyuki,Toyoda Nobuyuki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.339125

Reference3 articles.

1. W. K. Chu, J. W. Mayer, and M. A. Nicolet,Backscattering Spectrometry(Academic, New York, 1978), p. 255.

2. T. Hara and H. Suzuki, inProceedings of the 16th Symposium on Ion Implantation and Submicron Fabrication, Tokyo, Japan (The Institute of Physical and Chemical Research, Tokyo, 1985), p. 169.

3. S. M. Sze,Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 246.

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