Spin-accumulation capacitance and its application to magnetoimpedance
Author:
Affiliation:
1. Physics Department, Beijing Technology and Business University, Beijing 100048, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4995289
Reference28 articles.
1. In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
2. Interfacial capacitance effects in magnetic tunneling junctions
3. ac transport in ferromagnetic tunnel junctions
4. Magnetocapacitance effect of spin tunneling junctions
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4. Large Low-Magnetic-Field Magnetocapacitance Effect and Spin Accumulation in Graphene Oxide;IEEE Transactions on Magnetics;2022-02
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