Metal-insulator transition in n-3C-SiC epitaxial films-Reference-Cited by-同舟云学术

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Metal-insulator transition in n-3C-SiC epitaxial films

Published:2009-01-15 Issue:2 Volume:105 Page:023706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lebedev A. A.,Abramov P. L.,Agrinskaya N. V.,Kozub V. I.,Lebedev S. P.,Oganesyan G. A.,Tregubova A. S.,Shamshur D. V.,Skvortsova M. O.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3065989

Reference11 articles.

1. Heterojunctions and superlattices based on silicon carbide

2. Formation of two-dimensional electron gases in polytypic SiC heterostructures

3. Electronic properties of a 3C∕4H SiC polytype heterojunction formed on the Si face

4. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

5. Negative magnetoresistance in SiC heteropolytype junctions

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetic and Optical Properties of Natural Diamonds with Subcritical Radiation Damage Induced by Fast Neutrons;Applied Sciences;2023-05-19

2. Carrier dynamics and photoelectrical parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical techniques;Semiconductor Science and Technology;2013-12-02

3. Optical Characterization of Compensating Defects in Cubic SiC;Materials Science Forum;2013-01

4. Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures;Materials Science Forum;2010-04

5. On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures;Materials Science Forum;2010-04

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