High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight-Reference-Cited by-同舟云学术

High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

Published:2018-01 Issue:1 Volume:112 Page:012102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Dawei¹,Chen Cihai¹²,Zhang Jun¹,Wu Xiaomin¹,Chen Huipeng¹^ORCID,Guo Tailiang¹

Affiliation:

1. Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China

2. College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China

Funder

National Key Research & Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000313

Reference40 articles.

1. Resistive switching in transition metal oxides

2. Nonlithographic nano-wire arrays: fabrication, physics, and device applications

3. Organic inkjet-patterned memory array based on ferroelectric field-effect transistors

4. Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

5. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

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