Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si-Reference-Cited by-同舟云学术

Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si

Published:2014-12 Issue:22 Volume:105 Page:222408
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fischer Inga Anita¹,Chang Li-Te²,Sürgers Christoph³,Rolseth Erlend¹,Reiter Sebastian¹,Stefanov Stefan⁴,Chiussi Stefano⁴,Tang Jianshi²,Wang Kang L.²,Schulze Jörg¹

Affiliation:

1. Institut für Halbleitertechnik (IHT), Universität Stuttgart, Pfaffenwaldring 47, Stuttgart 70569, Germany

2. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA

3. Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, Karlsruhe 76131, Germany

4. Dpto. Física Aplicada, E. I. Industrial, Universidad de Vigo, Vigo, Spain

Funder

Western Institution of Nanoelectronics (WIN)

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903233

Reference38 articles.

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