Band‐edge emission from strained SiGe alloy layers on Ge(100) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112311
Reference10 articles.
1. Indirect band gap and band alignment for coherently strainedSixGe1−xbulk alloys on germanium (001) substrates
2. Electronic-band parameters in strainedSi1−xGexalloys onSi1−yGeysubstrates
3. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
4. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
5. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
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1. Optical Properties of Bound and Localized Excitons;Graduate Texts in Physics;2019
2. Infrared luminescence of annealed germanosilicate layers;Journal of Luminescence;2014-03
3. Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme;Journal of Applied Physics;2013-01-21
4. Optical Properties of Bound and Localized Excitons and of Defect States;Semiconductor Optics;2012
5. Formation of Ge quantum dots on boron-reconstructed surface/Si(111);Materials Science and Engineering: B;2002-02
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