GaN bandgap bias caused by semi-core treatment in pseudopotentials analyzed by the diffusion Monte Carlo method-Reference-Cited by-同舟云学术

GaN bandgap bias caused by semi-core treatment in pseudopotentials analyzed by the diffusion Monte Carlo method

Published:2021-02-01 Issue:2 Volume:11 Page:025225
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Nikaido Yutaka¹^ORCID,Ichibha Tom¹^ORCID,Nakano Kousuke¹^ORCID,Hongo Kenta²^ORCID,Maezono Ryo¹^ORCID

Affiliation:

1. School of Information Science, Japan Advanced Institute of Science and Technology (JAIST), Asahidai 1-1, Nomi, Ishikawa 923-1292, Japan

2. Research Center for Advanced Computing Infrastructure, Japan Advanced Institute of Science and Technology (JAIST), Asahidai 1-1, Nomi, Ishikawa 923-1292, Japan

Funder

FLAGSHIP2020

FLAGSFIP2020

JSPS Bilateral Joint Research Projects

Air Force Office of Scientific Research

Ministry of Education, Culture, Sports, Science and Technology

HPCI System Research Project

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035047

Reference104 articles.

1. Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors

2. Ab initiostudy of structural, dielectric, and dynamical properties of GaN

3. The electronic structure of wurtzite and zincblende AlN: anab initiocomparative study

4. Electronic structure calculations on nitride semiconductors

5. Structural and electronic properties of group-III nitrides

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