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Narrow-band deep-ultraviolet light emitting device using Al1−xGdxN

  • Published:2008-11-24 Issue:21 Volume:93 Page:211901
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Kita Takashi,Kitayama Shinya,Kawamura Masashi,Wada Osamu,Chigi Yoshitaka,Kasai Yoshihiro,Nishimoto Tetsuro,Tanaka Hiroyuki,Kobayashi Mikihiro

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect control strategies for Al1−xGdxN alloys;Journal of Applied Physics;2024-04-16

2. Synthesis and Calculations of Wurtzite Al1–xGdxN Heterostructural Alloys;Chemistry of Materials;2022-11-21

3. Electronic structure and magnetic ordering in gadolinium-doped AlGaN from LSDA + U calculations;International Journal of Computational Materials Science and Engineering;2018-09

4. Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

5. Carbon nanotube sheets used in field-emission lamps with vacuum-sealed diode structures;Fullerenes, Nanotubes and Carbon Nanostructures;2016-03-03
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