In-depth porosity control of mesoporous silicon layers by an anodization current adjustment
Author:
Affiliation:
1. GREMAN UMR 7347 Université de Tours, CNRS, INSA Centre Val de Loire, 16 rue P. et M. Curie, 37071 Tours cedex 2, France
Funder
The "Conseil départemental d'Indre et Loire"
The "Région Centre" in the frame of SIPeMUT research project
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4997228
Reference44 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. Investigations of the Electrical Properties of Porous Silicon
3. Thermal conductivity of thick meso-porous silicon layers by micro-Raman scattering
4. Effective refractive index and composition of oxidized porous silicon films
5. Elastic properties of porous silicon studied by acoustic transmission spectroscopy
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