Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells-Reference-Cited by-同舟云学术

Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Published:2020-08-24 Issue:8 Volume:117 Page:083103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kudryavtsev K. E.¹^ORCID,Rumyantsev V. V.¹^ORCID,Aleshkin V. Ya.¹,Dubinov A. A.¹,Utochkin V. V.¹,Fadeev M. A.¹^ORCID,Mikhailov N. N.²,Alymov G.³,Svintsov D.³,Gavrilenko V. I.¹^ORCID,Morozov S. V.¹

Affiliation:

1. Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhniy Novgorod 603087, Russia

2. Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 13 Lavrentiev av., Novosibirsk 630090, Russia

3. Laboratory of 2D Materials for Optoelectronics, Moscow Institute of Physics and Technology, 9 Institutsky lane, Dolgoprudny 141700, Russia

Funder

Russian Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0020218

Reference29 articles.

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4. Three stage cascade diode lasers generating 500 mW near 3.2 μm

5. Room-temperature vertical-cavity surface-emitting lasers at 4 μm with GaSb-based type-II quantum wells

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