Room temperature Mott metal–insulator transition in V2O3 compounds induced via strain-engineering-Reference-Cited by-同舟云学术

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Room temperature Mott metal–insulator transition in V2O3 compounds induced via strain-engineering

Published:2021-02-01 Issue:2 Volume:9 Page:021116
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Homm P.¹^ORCID,Menghini M.¹²^ORCID,Seo J. W.³^ORCID,Peters S.⁴,Locquet J. -P.¹^ORCID

Affiliation:

1. Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium

2. IMDEA Nanociencia, Cantoblanco, E-28049 Madrid, Spain

3. Department of Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, 3001 Leuven, Belgium

4. SENTECH Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin, Germany

Funder

H2020 LEIT ICT

KULeuven

Comisión Nacional de Investigación Científica y Tecnológica

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035865

Reference50 articles.

1. Metal-Insulator Transitions in Pure and DopedV2O3

2. Metal-Insulator Transition in(V1−xCrx)2O3

3. Mott Transition in Cr-DopedV2O3

4. Volume-wise destruction of the antiferromagnetic Mott insulating state through quantum tuning

5. Crystal Structure of the Low-Temperature Antiferromagnetic Phase ofV2O3

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2. Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V₂O₃ Films and the Influence of its Variability on Scaled Devices;Advanced Physics Research;2024-05-22

3. Mechanical Bending Strain-Actuated Modulation of Metal–Insulator Transition Temperature in Flexible Epitaxial V₂O₃ Films;ACS Applied Electronic Materials;2024-05-02

4. Confinement-Induced Isosymmetric Metal–Insulator Transition in Ultrathin Epitaxial V₂O₃ Films;ACS Applied Materials & Interfaces;2024-04-29

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