Schottky barrier modulation of metal/4H-SiC junction with thin interface spacer driven by surface polarization charge on 4H-SiC substrate-Reference-Cited by-同舟云学术

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Schottky barrier modulation of metal/4H-SiC junction with thin interface spacer driven by surface polarization charge on 4H-SiC substrate

Published:2015-12-21 Issue:25 Volume:107 Page:252101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Choi Gahyun¹,Yoon Hoon Hahn¹,Jung Sungchul¹,Jeon Youngeun²,Lee Jung Yong¹,Bahng Wook³,Park Kibog¹²^ORCID

Affiliation:

1. Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, South Korea

2. School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, South Korea

3. Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI), Changwon 642-120, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4938070

Reference32 articles.

1. Overview of SiC power electronics

2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

3. Structural and electronic properties of SiC polytypes

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