Effects of indium diffusion on the properties of ZnSe:Mn dc thin‐film electroluminescent devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335229
Reference9 articles.
1. Low Threshold DC Electroluminescence in ZnSe: Mn Films Deposited onn-GaAs Single Crystal
2. Efficient D‐C Electroluminescence from ZnS : Mn and ZnS : TbF3 Thin Films Prepared by RF Sputtering
3. Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour deposition
4. A study of ZnTe films grown on glass substrates using an atomic layer evaporation method
5. Low threshold voltage ZnSe:Mn thin-film electroluminescent cells prepared by molecular-beam growth method
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of polycrystalline ZnSe thin films grown by ion‐beam deposition;Journal of Applied Physics;1990-12
2. The chemistry of the growth of ZnS deposited by r.f. sputtering onto cadmium stannate I: The interface;Thin Solid Films;1990-11
3. Outlook;Molecular Beam Epitaxy;1989
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