A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device-Reference-Cited by-同舟云学术

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A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device

Published:2017-10-28 Issue:16 Volume:122 Page:164502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Berco Dan¹^ORCID,Chand Umesh²,Fariborzi Hossein²

Affiliation:

1. Nanyang Technological University, School of Electrical and Electronic Engineering, 50 Nanyang Avenue, Singapore, Singapore 639798

2. Computer, Electrical and Mathematical Sciences & Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5008727

Reference22 articles.

1. Memristor-The missing circuit element

2. Memristive devices and systems

3. T. Y. Tseng and S. M. Sze , Nonvolatile Memories: Materials, Devices, and Applications ( American Scientific Publishers, CA, USA, 2012), Vol. 1, p. 1.

4. Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

5. Memristive devices for computing

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1. Inducing alternating nanoscale rectification in a dielectric material for bidirectional-trigger artificial synapses;Journal of Vacuum Science & Technology B;2019-11

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