Equivalence of electrons and holes ina‐Sip‐s‐ndiodes-Reference-Cited by-同舟云学术

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Equivalence of electrons and holes ina‐Sip‐s‐ndiodes

Published:1988-11-15 Issue:10 Volume:64 Page:5220-5224
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kusian W.,Pfleiderer H.,Bullemer B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.342436

Reference12 articles.

1. Spectral photocurrent-voltage characteristics of crystalline silicon and amorphous silicon solar cells

2. Effect of boron doping and its profile on characteristics of p-i-n a-Si:H solar cells

3. Stability of P-I-N Amorphous Silicon Solar Cells with Boron-Doped and Undoped I-Layers

4. Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices

5. Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Amorphous thin-film solar cells;Applied Physics A Solids and Surfaces;1991-07

2. Reversal of Field and Photocurrent in a-Si Pin Solar Cells;Tenth E.C. Photovoltaic Solar Energy Conference;1991

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