Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide-Reference-Cited by-同舟云学术

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Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide

Published:2017-06-19 Issue:25 Volume:110 Page:253902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wietler T. F.¹²^ORCID,Tetzlaff D.¹,Krügener J.¹,Rienäcker M.³^ORCID,Haase F.³,Larionova Y.³,Brendel R.³⁴,Peibst R.¹³

Affiliation:

1. Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover, Germany

2. Laboratory of Nano and Quantum Engineering (LNQE), Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany

3. Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany

4. Institute for Solid State Physics, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany

Funder

Bundesministerium für Wirtschaft und Energie (BMWi)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4986924

Reference41 articles.

1. Charge Carrier Separation in Solar Cells

2. Contact Selectivity and Efficiency in Crystalline Silicon Photovoltaics

3. Corrigendum to ‘Solar cell efficiency tables (version 49)’[Prog. Photovolt: Res. Appl. 2017; 25:3-13]

4. Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

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