Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893376
Reference25 articles.
1. Atomic Layer Deposition for Semiconductors
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Ferroelectricity in hafnium oxide thin films
4. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films
5. Ferroelectricity in Simple Binary ZrO2 and HfO2
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