Ideality factor and barrier height for a GaN nanomembrane electrically contacted with a tungsten nano-tip in a TEM-Reference-Cited by-同舟云学术

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Ideality factor and barrier height for a GaN nanomembrane electrically contacted with a tungsten nano-tip in a TEM

Published:2020-02-21 Issue:7 Volume:127 Page:075109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Benaissa M.¹^ORCID,El Bouayadi R.²,Ihiawakrim D.³,Ersen O.³

Affiliation:

1. LaMCScI, Faculty of Sciences, Mohammed V University in Rabat, P.O. Box 1014, 10000 Rabat, Morocco

2. ISET, ENSA, Ibn Tofayl University of Kénitra, 14000 Kénitra, Morocco

3. IPCMS, UMR 7504 CNRS—Université de Strasbourg, 23 Rue de Lœss BP43, 67034 Strasbourg Cedex 2, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5128868

Reference30 articles.

1. Synthesis, assembly and applications of semiconductor nanomembranes

2. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

3. Electronics based on two-dimensional materials

4. Semiconductor Nanomembrane Materials for High-Performance Soft Electronic Devices

5. Si/Ge Junctions Formed by Nanomembrane Bonding

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Investigation on the Phonon Focusing, Polaritons and Reflection of Gan;2024

2. Investigation on the Phonon Focusing, Polaritons and Reflection of Gan with Lattice Dynamics Theory;SSRN Electronic Journal;2022

3. Optical properties of freestanding GaN nanomembranes using monochromated valence-EELS;Materials Science and Engineering: B;2021-10

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