Effect of charge transport through silicon nitride on thin gate oxide reliability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1526456
Reference7 articles.
1. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors
2. A simple wafer-level measurement technique for predicting oxide reliability
3. Gate oxide damage: Testing approaches and methodologies
4. Constant Current Stress Breakdown in Ultrathin SiO2 Films
5. Current Transport and Maximum Dielectric Strength of Silicon Nitride Films
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2. Defect generation in electronic devices under plasma exposure: Plasma-induced damage;Japanese Journal of Applied Physics;2017-05-25
3. Charging response of back-end-of-the-line barrier dielectrics to VUV radiation;Thin Solid Films;2012-06
4. Bias frequency dependence of pn junction charging damage induced by plasma processing;Thin Solid Films;2010-04
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