Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1526454
Reference10 articles.
1. Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures
2. Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation
3. Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
4. High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation
5. III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition
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3. Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy;Microelectronic Engineering;2013-12
4. Growth of InP self-assembled quantum dots on strained and strain-relaxed Inx(Al0.6Ga0.4)1−xP matrices by metal-organic chemical vapor deposition;Journal of Applied Physics;2006-08-15
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