Optical and structural characteristics of Al2O3films deposited by the reactive ionized cluster beam method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340506
Reference14 articles.
1. Al2O3‐SILICON INSULATED GATE FIELD EFFECT TRANSISTORS
2. RF Sputtered Aluminum Oxide Films on Silicon
3. Structure of aluminium oxide films deposited by d.c. reactive sputtering
4. The Characteristics of Al-Al2O3-Si Structures Formed by Reactive Suttering
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