Structural relation between Si and SiC formed by carbon ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1428105
Reference19 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Structure and strain measurements on SiC formed by carbon ion implantation
3. FORMATION OF SiC IN SILICON BY ION IMPLANTATION
4. Mechanism of buried β-SiC formation by implanted carbon in silicon
5. Synthesis of β-SiC Layer in Silicon by Carbon Ion `Hot' Implantation
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2. Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09
3. Patterning SiC nanoprecipitate in Si single crystals by simultaneous dual- beam ion implantation;Journal of Materials Science;2014-04-01
4. Tailoring of SiC nanoprecipitates formed in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
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