Photoluminescence evaluation of semi‐insulating GaAs grown by the liquid encapsulated Czochralski technique
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331492
Reference18 articles.
1. On the Preparation of High Purity Gallium Arsenide
2. On the Preparation of High Purity Gallium Arsenide
3. Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth
4. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
5. The Preparation of Semi-Insulating Gallium Arsenide by Chromium Doping
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1. Scanned photoluminescence of semiconductors;Semiconductor Science and Technology;1992-01-01
2. Analysis of Annealing Effect on the Threshold Voltage Uniformity of GaAs Field Effect Transistors;Journal of The Electrochemical Society;1991-09-01
3. Primary‐ion charge neutralization in secondary ion mass spectrometry analysis of insulators;Journal of Applied Physics;1986-03
4. Mechanical damage induced luminescence band in GaAs;Journal of Applied Physics;1985-02-15
5. Deep-Level Luminescence in Ni-Diffused GaAs;Japanese Journal of Applied Physics;1983-07-20
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