Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3050324
Reference27 articles.
1. Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si
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3. 1.54 μm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
4. Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices
5. Optical gain at 1.5 /spl mu/m in nanocrystal Si-sensitized Er-doped silica waveguide using top-pumping 470 nm LEDs
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2. Modification of erbium photoluminescence decay rate due to ITO layers on thin films of SiO2:Er doped with Si-nanoclusters;Journal of Luminescence;2013-04
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4. Effects of the thickness on the properties of erbium-doped silicon-rich silicon oxide thin films;physica status solidi (c);2011-01-25
5. Effect of the plasma composition on the structural and electronic properties of as-grown SiOx/Si heterolayers deposited by reactive sputtering;Semiconductor Science and Technology;2009-09-25
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