Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2130397
Reference10 articles.
1. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation
2. Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si
3. Transient Enhanced Diffusion of Arsenic by Self-Implantation —The role of As-I clusters—
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reduction of surface roughness and defect density by cryogenic implantation of arsenic;Japanese Journal of Applied Physics;2014-05-23
2. Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices;Applied Physics Express;2008-01-25
3. Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation;Solid State Phenomena;2007-10
4. Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation;Journal of Applied Physics;2007-08-15
5. Interstitial-mediated mechanisms of As and P diffusion in Si: Gradient-corrected density-functional calculations;Physical Review B;2006-11-07
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