High resolution electron microscopy of crystalline–amorphous interface: An indication to Eden aggregate-Reference-Cited by-同舟云学术

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High resolution electron microscopy of crystalline–amorphous interface: An indication to Eden aggregate

Published:1992-04-06 Issue:14 Volume:60 Page:1682-1684
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lereah Y.,Pénisson J. M.,Bourret A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.107236

Reference3 articles.

1. In-situ electron microscopy of some solidification processes in metallic alloys

2. Formation of dense branching morphology in the crystallization of Al-Ge amorphous thin films

3. Active Zone of Growing Clusters: Diffusion-Limited Aggregation and the Eden Model

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time resolved HREM of Al crystal surface;European Microscopy Congress 2016: Proceedings;2016-12-20

2. Experimental observation and simulation of fractal patterns of Au/Ge bilayer films;Applied Physics A: Materials Science & Processing;2003-01-01

3. Crystallisation and electrical resistivity of sputter-deposited aluminium–germanium alloy films;Thin Solid Films;2001-12

4. Characteristic length scale of avalanches in propagating interfaces;Physica A: Statistical Mechanics and its Applications;2000-06

5. Nanometer Scale Dynamics in Diffusion Limited Propagation of Interfaces in Amorphous Alloys;Physical Review Letters;1999-07-26

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