Capture from free‐carrier tails in the depletion region of junction barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91472
Reference5 articles.
1. New technique for identification of deep‐level trap emission to indirect conduction minima in GaAs
2. Photocapacitance effects of deep traps in epitaxial GaAs
3. Photocapacitance measurements on deep levels in GaAs under hydrostatic pressure
4. Spectral distribution of photoionization cross sections by photoconductivity measurements
5. Deep‐level traps and the conduction‐band structure of InP
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1. Experimental determination of the hole capture kinetics of H4F deep trap in electron-irradiated highly dopedp-type InP;Journal of Applied Physics;2004-07-15
2. Fine Structures of Fe-Related Deep Levels in GaAsP;Japanese Journal of Applied Physics;2000-04-30
3. Laplace defect spectroscopy for recognition of deep-level fine structures;Journal of Crystal Growth;2000-03
4. Deep level transient measurements ofDXcenters in GaAlAs up to room temperature;Journal of Applied Physics;1997-08-15
5. A method for the determination of barrier heights from the capacitance-voltage characteristics of a Schottky junction containing bulk deep traps;Solid-State Electronics;1995-05
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