Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368085
Reference15 articles.
1. Control of preferential orientation byinsituplasma supply during growth of polycrystalline silicon films
2. Control of Preferential Orientation in Polycrystalline Silicon Films Prepared by Plasma‐Enhanced Chemical Vapor Deposition
3. Structure and grain boundary defects of glow‐discharge polycrystalline silicon films deposited using disilane
4. Structure and Properties of LPCVD Silicon Films
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