Quantum Hall effect in p-Ge∕Ge1−xSix heterostructures with low hole mobility-Reference-Cited by-同舟云学术

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Quantum Hall effect in p-Ge∕Ge1−xSix heterostructures with low hole mobility

Published:2007-02 Issue:2 Volume:33 Page:147-150
ISSN:1063-777X
Container-title:Low Temperature Physics
language:en
Short-container-title:Low Temperature Physics

Author:

Arapov Yu. G.,Harus G. I.,Karskanov I. V.,Neverov V. N.,Shelushinina N. G.,Yakunin M. V.,Kuznetsov O. A.,Ponomarenko L.,de Visser A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2409651

Reference23 articles.

1. Observation of magnetic-field-induced delocalization: Transition from Anderson insulator to quantum Hall conductor

2. Magnetic-field-induced metal-insulator transition in two dimensions

3. Magnetic-field-induced insulator-quantum Hall-insulator transition in a disordered two-dimensional electron gas

4. Observation of the ν=1 quantum Hall effect in a strongly localized two-dimensional system

5. New Universality at the Magnetic Field Driven Insulator to Integer Quantum Hall Effect Transitions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Hall effect in graphene decorated with disordered multilayer patches;Applied Physics Letters;2013-12-02

2. Probing two-dimensional metallic-like and localization effects at low magnetic fields;Physica E: Low-dimensional Systems and Nanostructures;2010-02

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