Temperature and illumination intensity dependence of photoconductivity in sputter‐deposited heteroepitaxial (100)CdTe layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347424
Reference24 articles.
1. High quality CdTe epilayers on GaAs grown by hot‐wall epitaxy
2. Growth of (111) and (100) CdTe films on (100) GaAs substrates by hot wall epitaxy
3. Summary Abstract: Growth of high quality (100)CdTe films on (100)GaAs substrates by molecular beam epitaxy
4. Preparation of CdTe thin films on Ge substrates by molecular beam epitaxy
5. (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy
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1. Basic physics of phototransport as manifested in thin films of In-doped CdTe;Physical Review B;2010-11-03
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