Temperature dependence of the lasing transition in high‐purity GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654795
Reference18 articles.
1. Lasing Transitions inp+‐n‐n+(AlGa) As–Ga As Heterojunction Lasers
2. Spontaneous and stimulated recombination in p+-n-n+(AlGa)As-GaAs heterojunction laser diodes
3. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
4. Ionized Impurity Density inn‐Type GaAs
5. Magnetospectroscopy of shallow donors in GaAs
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1. Intermezzo: Magnetic Resonance and Optical Pumping;Masers and Lasers;2015-03-13
2. Phonon contribution to double‐heterojunction laser operation;Applied Physics Letters;1980-07-15
3. Chapter 2 Heterojunction Laser Diodes;Semiconductors and Semimetals;1979
4. Stimulated Emission and Gain;Semiconductor Lasers and Herterojunction Leds;1977
5. Photoluminescence from Uudoped GaAs under Applied Electric Field: The Transition Mechanism at High Excitation Levels near 77 K;Japanese Journal of Applied Physics;1976-06
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