Atomic resolution study of the interfacial bonding at Si3N4/CeO2−δ grain boundaries-Reference-Cited by-同舟云学术

Atomic resolution study of the interfacial bonding at Si3N4/CeO2−δ grain boundaries

Published:2008-08-04 Issue:5 Volume:93 Page:053104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Walkosz W.,Klie R. F.,Öğüt S.,Borisevich A.,Becher P. F.,Pennycook S. J.,Idrobo J. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2968683

Reference15 articles.

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2. Simulation of Cold Compaction Densification Behavior of Silicon Nitride Ceramic Powder

3. Grain growth anisotropy of β-silicon nitride in rare-earth doped oxynitride glasses

4. Observation of rare-earth segregation in silicon nitride ceramics at subnanometre dimensions

5. Interface Structure and Atomic Bonding Characteristics in Silicon Nitride Ceramics

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