Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization-Reference-Cited by-同舟云学术

Fabrication and characterization of low temperature polycrystalline silicon thin film transistors by ink-jet printed nickel-mediated lateral crystallization

Published:2009-03-23 Issue:12 Volume:94 Page:122105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Jang-Sik,Kim Min-Sun,Kim Dongjo,Kim Yong-Mu,Moon Jooho,Joo Seung-Ki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3105983

Reference15 articles.

1. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

2. Low‐temperature dopant activation and its application to polycrystalline silicon thin film transistors

3. The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing

4. Nickel induced crystallization of amorphous silicon thin films

5. Ink-jet printing of doped polymers for organic light emitting devices

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