A mechanism for endurance failure in metal‐nitride‐oxide‐semiconductor device structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329111
Reference4 articles.
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3. Endurance and memory decay of MNOS devices
4. Endurance studies on MNOS devices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reliability considerations in scaled SONOS nonvolatile memory devices;Solid-State Electronics;1999-11
2. The Combined Effect of Hydrogen and Oxygen Impurities in the Silicon Nitride Film of MNOS Devices;Journal of The Electrochemical Society;1992-03-01
3. Chemical Composition, Charge Trapping, and Memory Properties of Oxynitride Films for MNOS Devices;Journal of The Electrochemical Society;1990-11-01
4. Recent Developments in Ovonic Threshold Switching Device Technology;Disorder and Order in the Solid State;1988
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