Photoconductive laser spectroscopy as a method to enhance defect spectral signatures in amorphous oxide semiconductor thin-film transistors
Author:
Affiliation:
1. School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom
2. Electrical Engineering Division, University of Cambridge, Cambridge CB3 0FA, United Kingdom
Funder
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5070141
Reference26 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
2. Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications
3. Photostable Zn2SnO4 Nanowire Transistors for Transparent Displays
4. Metal oxide semiconductor thin-film transistors for flexible electronics
5. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
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1. Subgap states in aluminium- and hydrogen-doped zinc-oxide thin-film transistors;Journal of Materials Chemistry C;2023
2. Optical Manipulation of a Liquid Crystal (LC) Microdroplet by Optical Force;Crystal Research and Technology;2022-08-03
3. Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation;Scientific Reports;2021-09-24
4. Ultrabroadband density of states of amorphous In-Ga-Zn-O;Physical Review Research;2020-09-03
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