Calculations of Electron‐Radiation Damage Rate as a Function of Depth in Silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1656395
Reference9 articles.
1. Distribution of Electron‐Bombardment‐Induced Radiation Defects with Depth in Silicon
2. Measurements of the Distribution of Defect Introduction Rate with Depth in Silicon Irradiated with 300‐keV Electrons
3. The velocity distribution of β-particles after passing through thin foils
4. The Coulomb Scattering of Relativistic Electrons by Nuclei
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1. Depth profile of defects in Si irradiated with high-energy electrons; Monte Carlo simulation;Materials Letters;1993-12
2. Defect distribution in crystalline silicon irradiated with high-energy electrons;physica status solidi (a);1985-04-16
3. Spatial distributions of damages introduced into gap by collimated MeV-electron beam irradiations (II): Comparison with electron distributions by scattering;Radiation Effects;1984-01
4. Distribution of Radiation-Damage Rate with Depth in Silicon Bombarded with the High Energy Electrons;Japanese Journal of Applied Physics;1977-02
5. Radiation Damage;Semiconducting Devices;1976
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